The 67th JSAP Spring Meeting 2020

Presentation information

Poster presentation

13 Semiconductors » 13.3 Insulator technology

[14a-PA4-1~5] 13.3 Insulator technology

Sat. Mar 14, 2020 9:30 AM - 11:30 AM PA4 (PA)

9:30 AM - 11:30 AM

[14a-PA4-5] Reduction of Hydroxyl in the Low-Temperature Si Oxide Films Fabricated under Various Deposition Conditions

Weiqi Zhou1, Susumu Horita1 (1.JAIST)

Keywords:Silicon oxide, CVD, Low temperature

APCVD method with silicone oil and ozone gas was used to fabricate Si oxide films. In this meeting, we will discuss about the reduction of hydroxyl that generated during deposition reaction.