09:30 〜 11:30
[14a-PA5-19] Controlling Optical Properties of Sputtered CuGaS2 by Sulfurization
キーワード：CuGaS2, Sputtering, Posts sulfurization
For its high absorption coefficient and wide band-gap, CuGaS2 (CGS) is a promising material for optical devices. However, due to challenges in making CGS thin films with high crystallinity, there is few previous study on CGS device performance. This research, therefore, investigated the effect of sulfurization on optical properties of sputtered CGS expecting sulfurization improves quality of the film.
CGS thin films were sputtered using stoichiometric CGS target at 200oC. The samples were annealed at 550oC with sulfur powder under N2 gas atmosphere. PL measurement were conducted at room temperature using 405nm laser. PL signals at 2.46eV, which correspond to the band-edge of CGS, were measured. There were other signals around 1.5eV from deep defective state, but the intensity could be suppressed by controlling sulfurization condition. Further studies on material properties are crucial for understanding the mechanism of defect suppression by sulfurization and further improving the optical properties of CGS.
CGS thin films were sputtered using stoichiometric CGS target at 200oC. The samples were annealed at 550oC with sulfur powder under N2 gas atmosphere. PL measurement were conducted at room temperature using 405nm laser. PL signals at 2.46eV, which correspond to the band-edge of CGS, were measured. There were other signals around 1.5eV from deep defective state, but the intensity could be suppressed by controlling sulfurization condition. Further studies on material properties are crucial for understanding the mechanism of defect suppression by sulfurization and further improving the optical properties of CGS.