[14p-A201-1~8] Nano-cybernetics of interface bonded at room or low temperature and ultra thin films at heterojunction interface

[14p-A201-7] Defects observation in GaN pn junction diodes and explication of reverse leakage

〇Yoshio Honda^1,2, Atsushi Tanaka^1,3, Seiya Kawasaki⁴, Manato Deki¹, Amano Hiroshi^1,5,6 (1.IMaSS, Nagoya Univ., 2.IAR, Nagoya Univ., 3.NIMS, 4.Dept. of Electronics, Nagoya Univ., 5.VBL, Nagoya Univ., 6.ARC, Nagoya Univ.)

Keywords:Multiphoton excitation microscope, GaN pn diode, killer defect

Many dislocations exisit in a GaN crystal, which causes a reduction in the reliability of a power device. However, the dislocation and its correlation has not been discussed so much. In this study, dislocations were visualized by multiphoton microscopy, and the spatial evaluation of defects in a wide depthwas made possible by using it. The existence of pure screw dislocations and the defects converted from the screw dislocations into nanopipes during the growth process were found to be killer defects in the reverse breakdown voltage of pn diodes.