[14p-A302-1~18] 15.4 III-V-group nitride crystals

[14p-A302-2] GaN bulk crystal growth by acidic ammonothermal method using a 4-inch-diam. autoclave

〇kouhei kurimoto^1,2, quanxi bao^1,2, makoto saito^1,3, yutaka mikawa³, rinzo kayano², kouhei shima¹, kazunobu kojima¹, toru ishiguro¹, shigefusa chichibu¹ (1.IMRAM-Tohoku Univ., 2.Japan Steel Works, 3.Mitsubishi Chemical Corp.)

Keywords:GaN, Ammonothermal Method, bulk Crystal

The acid ammonothermal method is expected as one of mass production methods for large diameter bulk GaN crystals.We have reported that we succeeded in growth using a 4-inch size seed crystal by conducting a crystal growth experiment by introducing a GaN crystal growth autoclave with an inner diameter of 120 mm capable of manufacturing 4-inch diameter wafers.In this talk, we report on the latest achievements of crystal growth using the autoclave.