4:00 PM - 4:15 PM
[14p-A302-9] Properties of the Free-standing GaN Substrates Produced with the Maskless 3D Method
Keywords:GaN substrate, HVPE
Presentation information
Oral presentation
15 Crystal Engineering » 15.4 III-V-group nitride crystals
[14p-A302-1~18] 15.4 III-V-group nitride crystals
Sat. Mar 14, 2020 1:45 PM - 6:45 PM A302 (6-302)
Makoto Saito(Tohoku Univ.), Hisashi Murakami(TUAT), Shugo Nitta(Nagoya Univ.)