[14p-A303-1~14] 【CS.4】 6.1 強誘電体薄膜、13.3 絶縁膜技術、13.5 デバイス／配線／集積化技術のコードシェア

▼ [14p-A303-4] Fabrication of ferroelectric hafnium-zirconium dioxide thin films by solution process

〇(D)Mohit Mohit¹、Jyotish Patidar¹、Ken-Ichi Haga¹、Eisuke Tokumitsu¹ (1.School of Materials Science, JAIST)

キーワード：Hafnium dioxide, Solution process, Buffer layer

Ferroelectric Yttrium doped HZO (Y-HZO) thin films were fabricated by CSD with and without ZrO2 and YSZ buffer layers on a Pt/Ti/SiO2/Si substrate. The ferroelectric nature of Y-HZO films fabricated by the CSD method was demonstrated from P-E and C-V measurements.