[14p-A403-1~19] 17.2 Graphene

[14p-A403-19] Theory on Initial Stage of Graphene Growth on Cu partially covered with h-BN

〇Hiroyuki Kageshima¹, Shengnan Wang², Hiroki Hibino³ (1.Shimane Univ., 2.NTT Basic Research Labs., 3.Kwansei Gakuin Univ.)

Keywords:graphene, CVD growth, first-principles calculation

Graphene is a semiconductor, but h-BN is an insulator. Therefore, we can create new oppotunities for the electronics application, if we can form lateral/vertical heterostructures of graphene and h-BN by the CVD growth at will. To get the guiding principles for such a bottom-up fabrication, we study the details of atomic-scale mechanism by the first-principles calculation. We report the recent progress since the last meeting.