2020年第67回応用物理学会春季学術講演会

講演情報

一般セッション(口頭講演)

17 ナノカーボン » 17.3 層状物質

[14p-A404-10~19] 17.3 層状物質

2020年3月14日(土) 16:30 〜 19:00 A404 (6-404)

森山 悟士(物材機構)

16:45 〜 17:00

[14p-A404-11] MBE growth of atomically-thin chromium telluride films with robust out-of-plane magnetization

〇(DC)Yue Wang1、Masaki Nakano1,2、Satoshi Yoshida1、Hideki Matsuoka1、Kyoko Ishizaka1,2、Yoshihiro Iwasa1,2 (1.Dept. Appl. Phys., Univ. of Tokyo、2.RIKEN CEMS)

キーワード:2D materials, Transition-metal dichalcogenide, Molecular-beam epitaxy

Discovery of atomically-thin layered two dimensional (2D) van der Waals materials have attracted considerable attention due to their emerging properties from electronic and optical viewpoints, while 2D ferromagnetism, which plays an important role on 2D spintronics, has been unexplored until recent studies on semiconducting Cr2Te2Te6, CrI3, and metallic Fe3GeTe2. Combining ferromagnetic properties with electronic and optical properties could open huge application opportunities in magnetoelectric and magneto-optics fields. From this point, transitional-metal dichalcogenides (TMDCs) are one of the most promising candidates, which already showed potential in electronic and optoelectronic applications. While currently discovered VSe2 has only weak ferromagnet with an isotropic feature. Here we will introduce our growth in atomically-thin chromium telluride epitaxial thin films on insulating sapphire substrates, which showed strong ferromagnetic behavior with robust out-of-plane anisotropy.