[14p-A404-10~19] 17.3 Layered materials

[14p-A404-12] Transport properties of Cr-doped NbSe₂ epitaxial thin films grown by molecular-beam epitaxy

〇(M2)Yuki Majima¹, Hideki Matsuoka¹, Masaki Nakano^1,2, Bruno Kenichi Saika¹, Satoshi Yoshida¹, Kyoko Ishizaka^1,2, Yoshihiro Iwasa^1,2 (1.Tokyo Univ., 2.RIKEN-CEMS)

Keywords:2D materials, transition-metal dichalcogenide, molecular beam epitaxy

Recently, transition-metal dichalcogenides have been extensively studied because of their intriguing physical properties and functionalities emerging with reduced dimensionality. We here employ molecular-beam epitaxy (MBE), by which we could grow NbSe₂ epitaxial thin films with periodically Cr-intercalated phase. We found that those Cr-doped NbSe₂ films show largely different transport properties from those of undoped NbSe₂. In the presentation, we report the detailed MBE growth process and discuss structural, electrical, and magnetic properties of the obtained films.