[14p-A404-10~19] 17.3 層状物質

▲ [14p-A404-19] Valleytronics in Biased Bilayer MoS₂

〇(P)Afsal Kareekunnan¹、Manoharan Muruganathan¹、Hiroshi Mizuta^1,2 (1.JAIST、2.Hitachi Camb. Lab.)

キーワード：Valleytronics, Berry Curvature, Bilayer MoS2

Valleytronics is the study of the valley degree of freedom where the valley refers to the minima in the electronic band structure of the materials. The charge carriers residing in these valleys have a geometrical phase associated with them called Berry's phase. Berry phase gives rise to various physical properties such as Berry curvature and which has opposite values in the adjacent valleys in inversion asymmetric materials. Thus, Berry curvature, which can be described as a pseudo-magnetic field in the reciprocal space drives the carriers to the opposite edges of the materials according to the direction of the curvature in the presence of an in-plane electric field. This phenomenon is called Valley Hall Effect (VHE). Monolayer MoS₂ is widely studied for valleytronics properties due to its inversion asymmetry. Although bilayer MoS₂ is symmetric, an out-of-plane electric field can render asymmetry in the system. Thus herein we study the Valleytronics of biased bilayer MoS₂ .