2020年第67回応用物理学会春季学術講演会

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一般セッション(口頭講演)

17 ナノカーボン » 17.3 層状物質

[14p-A404-10~19] 17.3 層状物質

2020年3月14日(土) 16:30 〜 19:00 A404 (6-404)

森山 悟士(物材機構)

18:45 〜 19:00

[14p-A404-19] Valleytronics in Biased Bilayer MoS2

〇(P)Afsal Kareekunnan1、Manoharan Muruganathan1、Hiroshi Mizuta1,2 (1.JAIST、2.Hitachi Camb. Lab.)

キーワード:Valleytronics, Berry Curvature, Bilayer MoS2

Valleytronics is the study of the valley degree of freedom where the valley refers to the minima in the electronic band structure of the materials. The charge carriers residing in these valleys have a geometrical phase associated with them called Berry's phase. Berry phase gives rise to various physical properties such as Berry curvature and which has opposite values in the adjacent valleys in inversion asymmetric materials. Thus, Berry curvature, which can be described as a pseudo-magnetic field in the reciprocal space drives the carriers to the opposite edges of the materials according to the direction of the curvature in the presence of an in-plane electric field. This phenomenon is called Valley Hall Effect (VHE). Monolayer MoS2 is widely studied for valleytronics properties due to its inversion asymmetry. Although bilayer MoS2 is symmetric, an out-of-plane electric field can render asymmetry in the system. Thus herein we study the Valleytronics of biased bilayer MoS2 .