[14p-A404-1~9] 17.2 Graphene

△ [14p-A404-5] Influence of the C-rich domain in h-BN on transport properties of adjacent graphene

〇Momoko Onodera¹, Kenji Watanabe², Miyako Isayama¹, Satoru Masubuchi¹, Rai Moriya¹, Takashi Taniguchi², Tomoki Machida^1,3 (1.IIS, 2.NIMS, 3.CREST-JST)

Keywords:graphene, hexagonal boron nitride, carrier transport

h-BN crystals synthesized under high-pressure and high-temperature have a distinct domain which contains a significant amount of carbon impurities. We reveal the influence of the carbon-rich domain by studying the transport properties of adjacent graphene. Graphene on the domain showed lower carrier mobility and high carrier inhomogeneity than that on the pristine region and also exhibited characteristic bending in the Landau fan diagram.