The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

Joint Session M "Phonon Engineering" » 22.1 Joint Session M "Phonon Engineering"

[14p-A405-1~15] 22.1 Joint Session M "Phonon Engineering"

Sat. Mar 14, 2020 1:15 PM - 5:30 PM A405 (6-405)

Yoshiaki Nakamura(Osaka Univ.), Junichiro Shiomi(Univ. of Tokyo), Takashi Yagi(AIST)

2:45 PM - 3:00 PM

[14p-A405-6] Three-dimensional periodic ZnO nanostructures fabricated by templating process using solution-derived ZnO

〇(DC)kyokutouhou ou1, ishikawa yasuaki1, uenuma mutsunori1, uraoka yukiharu1 (1.NAIST Univ.)

Keywords:nanostructure, phonon, thermoelectric conversion

Zinc oxide (ZnO) is a wide direct band gap semiconductor with high electron mobility and is a promising thermoelectric material because of its non-toxicity, high thermal stability, and comparatively high Seebeck coefficient among metal oxide semiconductors. Neverheless, because of a high thermal conductivity (>40 W/mK), ZnO has an enormously low figure of merit (ZT), and limits the thermoelectric application of the material. In this work, ZnO three-dimensional nanostructures are fabricated with an all-solution based process without using vacuum processes to try to increase the efficiency. Here we fabricated ZnO 3D nanostructure with different concentrations at same fabrication conditons. And the ZnO nanostructure was successfully achieved without the residue on the surface. Moreover, the higher resistance of ZnO nanostructure was decreased by high temperature annealing at 400 degree under the atmosphere of N2 (98%) and H2 (2%) for 2h. In the conference, we will report the estimated electric conductivity, Seebeck coefficient, and power factor with these three different samples as well.