[14p-A407-1~12] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[14p-A407-4] Radiation-induced defects in the Cu-dope silica glass prepared from porous silica glass

〇Yuya Takada¹, Atsushi Kinomura², Takeshi Saito², Arifumi Okada¹, Takashi Wakasugi¹, Kohei Kadono¹ (1.Kyoto Inst. tech., 2.KURNS)

Keywords:Radiophotoluminescence, silica glass, dosimeter

When glasses are irradiated with ionizing radiation, the valence of metal ions in the glass changes and new luminescent centers are generated. The photoluminescence from these luminescent centers is called radiophotoluminescence (RPL). Ag-doped phosphate glass dosimeter is based on this phenomenon. In this study, we have researched RPL on Cu-doped silica glasses prepared from porous silica glasses. In this presentation, we report radiation-induced defects in the Cu-doped silica glasses. When the Cu-SG were irradiated with X-ray radiation, boron-oxygen hole centers were induced in the glasses. It seems that these centers improved the stability of hole centers.