[14p-A410-1~9] Organic Transistors: Exploring New Frontiers

[14p-A410-8] High-Gain N-type Organic Transistors Using Source-Gated Structure

〇(B)Yudai Henmi¹, Radu A. Sporea², Yasunori Takeda¹, Hiroyuki Matsui¹, Shizuo Tokito¹ (1.ROEL,Yamagata Univ., 2.Surrey Univ)

Keywords:organic field effect transistor, Schottky barrier transistor, n-type organic semiconductor

Source-gated transistors (SGTs), a kind of field-effect transistors (FETs), have intentional Schottky junction at the source electrode/organic semiconductor interface, and control the current by the depletion layer near the source electrode. The advantages of SGTs over conventional FETs are low power consumption due to pinch-off at low voltage, and high intrinsic gain due to high output resistance in saturation regime. Recently, p-type organic SGTs using C8-BTBT have been reported as amplifier circuits with low power consumption and very high gain. However, n-type organic SGTs have never been reported so far. Here we show n-type organic SGTs with low operation voltage and high intrinsic gain for the first time.