[14p-A501-1~12] 【CS.7】 10.1 新物質・新機能創生（作成・評価技術）、10.2 スピン基盤技術・萌芽的デバイス技術、10.3 スピンデバイス・磁気メモリ・ストレージ技術、10.4 半導体スピントロニクス・超伝導・強相関のコードシェアセッション

▲ [14p-A501-2] In-plane magnetization switching detected by spin torque ferromagnetic resonance

〇Motomi Aoki¹、Yuichiro Ando¹、Ryo Ohshima¹、Teruya Shinjo¹、Masashi Shiraishi¹ (1.Kyoto Univ.)

キーワード：spintronics, spin dynamics

Magnetization switching using spin orbit torque (SOT) have been investigated intensively, because it enables a low power consumption and high endurance magnetoresistive random access memory. For the in-plane magnetization materials, fabrication of spin valves such as a magnetic tunnel junction is generally required. Such additional and complicated fabrication procedures impede a wide variety of material search for spin orbit materials. In this study, we demonstrated in-plane magnetization switching of a single Ni₈₀Fe₂₀ (Py) layer on platinum (Pt) layer by using the spin rectification effect under ferromagnetic resonance (FMR) condition and a successful magnetization switching was confirmed above 1.55×10⁷ A/cm². In the presentation, we will also report relationship between detection sensitivity of the magnetization switching and size of the ferromagnetic layer.