[14p-A501-1~12] 【CS.7】 10.1 新物質・新機能創生（作成・評価技術）、10.2 スピン基盤技術・萌芽的デバイス技術、10.3 スピンデバイス・磁気メモリ・ストレージ技術、10.4 半導体スピントロニクス・超伝導・強相関のコードシェアセッション

▼ [14p-A501-3] Observation of spin orbit torque magnetization switching without external magnetic field in wire fabricated by magnetic field applied sputtering method

〇Yuichiro Kurokawa¹、Masakazu Wakae¹、Masahiro Fujimoto¹、Masahiro Itoh¹、Hiromi Yuasa¹ (1.Kyushu Univ.)

キーワード：Current-induced magnetization switching, Spin orbit torque

The spin orbit torque (SOT) has the higher potential for manipulating magnetization because it realizes the small power consumption due to the faster magnetization switching. To switch magnetization by SOT, an external in-plane magnetic field must be applied, which is disadvantage for the high density MRAM. Whereas, the SOT-current induced magnetization switching (CIMS) without external field with in-plane exchange bias field have been reported. However, to obtain the exchange bias field, we have to anneal the wire in high temperature. It often leads to weaken magnetic anisotropy. In this study, to generate exchange bias field in room temperature, we used magnetic field applied sputtering process and as a result successfully observed SOT-CIMS without external field.