[14p-B401-1~17] 13.7 Compound and power electron devices and process technology

[14p-B401-1] Temperature dependence of the effective mobility of GaN-MOSFETs

〇Katsunori Ueno¹, Hideaki Matsuyama¹, Takuro Inamoto¹, Ryo Tanaka¹, Yuta Fukushima¹, Shinya Takashima¹, Masaharu Edo¹ (1.Fuji Electric)

Keywords:GaN, MOSFET, mobility

In order to research the limiting factor of the MOS channel mobility on GaN, we observed the temperature dependence of the MOS channel mobility. In the low field region, the mobility decreases according to the temperature decrease, it slightly increases in the high field region. These indicate that the Coulomb scattering is the main factor for the low field and the acoustic phonon or the optical phonon may limit the mobility in the high field too. We will discuss the difference of the fitting parameters between samples with different mobility.