[14p-B406-1~18] 3.10 光量子物理・技術

▲ [14p-B406-14] 1.55 µm photon emission from droplet epitaxy InAs quantum dots on InP(111)A

〇(P)Neul Ha¹、Takaaki Mano¹、Takashi Kuroda¹、Kazuaki Sakoda¹ (1.NIMS)

キーワード：Quantum dots, Droplet epitaxy, Single and entangled photons source

Recently, we have successfully created symmetric InAs quantum dots (QD) on InAlAs/InP(111)A substrate using droplet epitaxy. However, the previous samples were not sufficiently optimized: the dot size distribution is relatively large so that careful dot selection is required to find a dot that emits at 1.55 µm. In this study, we extend the droplet epitaxy scheme to achieve a purely 1.55 µm photon emission. The use of a state-of-the-art superconducting photon detector allows us to investigate single photon emission dynamics in the standard telecom C-band. The photoluminescence spectra of our InAs QDs show Gaussian-like single peak centered at a wavelength of 1,550 nm. The results suggest that the majority of dots can emit in. the telecom C-band. The coincidence of two photons as function of delay time shows a clear antibunching dip, which yield nearly no probability of emitting two photons at the same time.