[14p-B408-1~16] 3.1 Basic optics and frontier of optics

△ [14p-B408-4] Increase in the photo-sensitivity of Si photodetector using a surface nanostructure

〇(B)Masato Asanuma¹, Hiroyasu Fujiwara², Kenji Iida³, Masashi Noda⁴, Kazuhiro Yabana⁴, Takashi Yatsui¹ (1.Univ. Tokyo, 2.Hamamatsu Photonics, 3.IMS, 4.Univ. Tsukuba)

Keywords:semiconductor, optical near-field

In previous research, it was confirmed that a pn photodiode in which fine gold particles were sprayed as a near-field light source caused wave number excitation, and the photosensitivity increased. In this talk, we evaluated the sensitivity between the electrodes of a horizontal pn photodiode on which fine gold particles with a diameter of 100 nm were scattered using microspectroscopy.The wavelength of the irradiated light was 1.06 μm, and the mappinng measurement was performed in a 20 μm square area.I will announce the results.