[14p-B415-1~15] 3.11 Photonic structures and phenomena

[14p-B415-15] Controlling Bragg reflection from a Silicon Crystal by X-ray Structured Light

〇yoshiki kohmura¹, Kei Sawada¹, Chi-Feng Huang¹, Tetsuya Ishikasa¹ (1.RIKEN)

Keywords:Structured light illumination, Gap of dispersion relectionship, Forbidden reflection

In this research, we illuminated x-rays on a silicon (222) forbidden reflection plane. When the illuminated x-ray beam had no structure, an extremely low but non-zero reflectivity was observed which is, e.g., due to the dilute distribution of the bonding charge aside from the electron charges around the atoms in the unit cell. By illuminating the x-ray beam, having periodic phase domains with aperiodic pitches in every 40 pitches, on a (222) plane, increment and decrement of reflectivity were observed at the aperiodic regions. Such change of reflectivity depended on the offset angle from the Bragg angle. To fully understand and to utilize this novel effect, we have started a simulation research.