[14p-D221-1~16] 6.2 Carbon-based thin films

△ [14p-D221-4] Creation of NV Center by C₅N₅H₅ Ion Implantation

〇Kosuke Kimura^1,2, Taisei Higuchi^1,2, Shinobu Onoda², Wataru Kada¹, Takahiro Sonoda³, Hiroshi Kawarada³, Hideyuki Watanabe⁴, Junichi Isoya⁵, Osamu Hanaizumi¹, Takeshi Ohshima² (1.Gunma Univ., 2.QST, 3.Waseda Univ., 4.AIST, 5.Univ. of Tsukuba)

Keywords:Adenine ion, NV center, ion implantation

We studied the enhancement of organic-compound molecular ion implantation technique to accomplish multiple qubit of nitrogen and vacancy (NV) centers, which known as qubits with excellent magneto-optical properties at room temperature, in single crystalline diamond. Difficulties in generation of nitrogen cluster molecular ions had been prevented to establish multiple qubit of NV centers created by ion implantation method. Our previous studies suggested that formation of multiple NV centers has been confirmed by utilizing organic compound (C₅N₄H_n) molecular ions. This led us to utilize organic compounds enriching nitrogen than C₅N₄H_n for further accomplishment of multi-qubits. In this study, we have developed a newly developed C₅N₅H₅ ion implantation. The confocal microscope observation revealed that creation of three NV center complex was confirmed.