13:30 〜 15:30
▲ [14p-PA1-11] Magnetic Properties of Poly-crystalline MnAlGe Films: Layer Thickness and Adjacent Layer Dependence
キーワード：perpendicular magnetization, intermetallic compounds, manganese compounds
Layer-thickness and adjacent layer dependence of crystal structrue and magnetic properties were investigated in poly-crystalline MnAlGe films showing Cu2Sb-type crystal structure.
Film samples were fabricated onto thermally oxidized silicon substrates using an ultra-high vacuum magnetron sputtering machine. Two sereis of samples were fabricated: No buffer samples and MgO buffer samples for both of which capping layers consisted of MgO|Ta layers.
Perpendicular magnetization was clearly observed for layer thicknesses of greater than 10 nm for all samples. No hysteresis was observed in magnetization curves measurements for the "No buffer" sample with a layer thickness of 5 nm. On the other hands, for the "MgO buffer" sample, perpendicular magnetization was clearly observed for the layer thickness of 5 nm.
Film samples were fabricated onto thermally oxidized silicon substrates using an ultra-high vacuum magnetron sputtering machine. Two sereis of samples were fabricated: No buffer samples and MgO buffer samples for both of which capping layers consisted of MgO|Ta layers.
Perpendicular magnetization was clearly observed for layer thicknesses of greater than 10 nm for all samples. No hysteresis was observed in magnetization curves measurements for the "No buffer" sample with a layer thickness of 5 nm. On the other hands, for the "MgO buffer" sample, perpendicular magnetization was clearly observed for the layer thickness of 5 nm.