2020年第67回応用物理学会春季学術講演会

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10 スピントロニクス・マグネティクス » 10 スピントロニクス・マグネティクス(ポスター)

[14p-PA1-1~74] 10 スピントロニクス・マグネティクス

2020年3月14日(土) 13:30 〜 15:30 PA1 (第3体育館)

13:30 〜 15:30

[14p-PA1-12] Strong enhancement of anomalous Nernst effect in Fe by Ga substitution and its application for heat flux sensor

Hiroyasu Nakayama1、Keisuke Masuda1、Weinan Zhou1、Jian Wang1、Asuka Miura1、Ken-ichi Uchida1,2,3、Masayuki Murata4、Yuya Sakuraba1,5 (1.NIMS、2.Tohoku Univ.、3.Univ. of Tokyo、4.AIST、5.JST PRESTO)

キーワード:anomalous Nernst effect

The anomalous Nernst effect (ANE) has been investigated in Fe1-xGax alloy with different Ga atomic compositions in the range of x = 0-0.44. We fabricated Fe1-xGax thin films on MgO(001) single-crystalline substrates by cosputtering technique. The systematic magnetotransport measurements and the first-principles calculations revealed that the large ANE in Fe1-xGax is due to the large transverse Peltier coefficient. The maximum value of the theoretically calculated transverse Peltier coefficient shows good agreement with the experimentally determined values in Fe1-xGax. The large enhancement of the ANE in Fe by replacing Fe atoms with Ga atoms can be mainly attributed to the shift of the Fermi energy, which can be understood as the electron doping effect. This kind of approach based on the Fermi energy engineering can be applicable to other magnetic materials. Therefore, these findings will provide crucial information to enhance the thermoelectric power through the ANE in various magnetic materials and pave the way to practical applications using ANE.