[14p-PA1-1~74] 10 Spintronics and Magnetics

[14p-PA1-13] MgO barrier magnetic tunnel junctions with Mn-doped bcc Co electrodes

Kazuma Kunimatsu¹, Tomoki Tsuchiya¹, 〇Shigemi Mizukami¹ (1.Tohoku Univ.)

Keywords:spintronics, magnetic tunnel junctions, tunnel magnetoresistance

We fabricated bcc CoMn/MgO/CoMn magnetic tunnel junctions (MTJs). The MTJs annealed at 350 ^oC showed the TMR ratio of about 240% at room temperature. The TMR ratio exceeded 630% at low temperature. This low temperature values were larger than those reported in bcc Co or bcc FeCo MgO-MTJs in the past.