[14p-PA1-1~74] 10 Spintronics and Magnetics

▲ [14p-PA1-17] Preparation of topological semimetal CoSi thin films for spin-orbit torque devices

〇(M1)Ke Tang^1,2, Zhenchao Wen², Qingyi Xiang², Hiroaki Sukegawa², Seiji Mitani^1,2 (1.Univ. of Tsukuba, 2.NIMS)

Keywords:Semimetal, Spin Hall effect, Spin Hall magnetoresistance

In order to realize the practical application of spin-orbit torque devices, it’s important to find materials with large spin Hall effect. Very recently, CoSi was predicted as a kind of new topological semimetal possessing Weyl points near the Fermi energy in its electronic band structure, which may generate significantly intrinsic contribution to spin Hall effect. In this work, polycrystalline CoSi films were fabricated by magnetron sputtering and the spin Hall angle of the CoSi films was evaluated to be around 3.5%, which is large for material systems without heavy metals.