[14p-PA1-1~74] 10 Spintronics and Magnetics

[14p-PA1-23] Switching of exchange bias polarity by magnetoelectric effect of 50-nm-thick Cr₂O₃

〇Yu Shiratsuchi¹, Kentaro Toyoki¹, Yiran Tao¹, Hikaru Aono¹, Ryoichi Nakatani¹ (1.Osaka Univ.)

Keywords:magnetoelectric effect, Cr2O3 thin film, exchange bias

Antiferromagnetic (AFM) materials has been explored based on the ultra-fast spin dynamics and the high-density storage. Despite these promising application, the AFM spin control based on a magnetic field or a spin-polarized current is difficult owing to the compensated spin structure. We have been focused on the magnetoelectric (ME) effect of the AFM Cr₂O₃ thin film as the method to control the AFM spin/domain state and have been reported the switching of the perpendicular exchange bias based on this scenario. One continuing requirement in this technique is the reduction of the Cr₂O₃ thickness: to date, 115-nm thick Cr₂O₃ is a smallest case. In this work, we present the ME effect in the 50-nm-thick Cr₂O₃ and discuss the energy condition accompanied with the reduction of the Cr₂O₃ thickness.