[14p-PA1-1~74] 10 Spintronics and Magnetics

▲ [14p-PA1-24] Voltage induced multilevel nonvolatile switching of perpendicular magnetization in an interfacial multiferroic heterostructure

〇Satya Prakash Pati¹, Tomoyasu Taniyama¹ (1.Nagoya Univ.)

Keywords:Interfacial Multiferroics, Perpendicular Magnetic Anisotropy, Voltage induced magnetization switching

The use of converse magnetoelectric (ME) effect, i.e., voltage control of magnetization is one of the solutions towards reduction of power consumption in spintronic devices. Interfacial multiferroics (iMF) comprising a ferromagnet (FM) and a ferroelectric (FE) material are proved to be promising candidates rather than single phase multiferroics. A quantitative understanding is still required to offer a clear description of the mechanisms of the iMF coupling in a wide range of FM/FE heterostructures. In this work, we investigate the voltage induced ME response at the interface of Cu/Ni multilayer and (001) oriented [Pb(Mg_1/2Nb_2/3)O₃]_0.7-[PbTiO3]_0.3 (PMN-PT) substrate.