[14p-PA1-1~74] 10 スピントロニクス・マグネティクス

[14p-PA1-46] Estimation of switching energy barrier by String method assuming side-wall damage in perpendicular magnetized magnetic tunnel junctions

〇永沼 博^1,2,3、佐藤 英夫^1,2,3、池田 庄司^1,2,3、遠藤 哲郎^1,2,3,4,5 (1.東北大CIES、2.東北大CSIS、3.東北大CSRN、4.東北大工、5.東北大通研)

キーワード：不揮発性磁気メモリ、マイクロマグネティクスシミュレーション、プロセスダメージ

The influence of magnetic damage at the sidewall of a perpendicular MTJs, that are core device of STT-MRAM, was discussed based on thermal stability factor D, double-logarithm plot of normalized switching energy barrier E and saturation magnetization M_s, and their exponential slope n. D was calculated by string method and the domain wall was formed in all the simulation condition. Naively, n was increased with increasing the thickness of damaged layer of sidewall. It was found that the sidewall damage can be explained by reduction of M_s and exchange stiffness constant A_s rather than the interfacial perpendicular anisotropy.