2020年第67回応用物理学会春季学術講演会

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10 スピントロニクス・マグネティクス » 10 スピントロニクス・マグネティクス(ポスター)

[14p-PA1-1~74] 10 スピントロニクス・マグネティクス

2020年3月14日(土) 13:30 〜 15:30 PA1 (第3体育館)

13:30 〜 15:30

[14p-PA1-68] The study on spin-orbit torque using metallic disordered atomic structure of metallic glass

Satoshi Iihama1,2、Yuya Koike3、Zhen Lu1、Kentaro Watanabe1、Mingwei Chen1,4、Shigemi Mizukami1,2,5 (1.AIMR, Tohoku Univ.、2.CSRN, Tohoku Univ.、3.Tohoku Univ.、4.Johns Hopkins Univ.、5.CSIS, Tohoku Univ.)

キーワード:Spin-orbit torque, Metallic glass

Large spin-charge conversion in metastable disordered atomic structure of metallic glass was reported recently [1]. The anomalous temperature dependence of inverse spin-Hall effect can be explained by the phonon skew scattering contribution due to the nature of metastable atomic structure. However, charge-spin conversion as well as spin-orbit torque using metallic glass has never been studied so far. In this study, we focused on spin-orbit torque using Pd-Si binary alloy metallic glass which is known to show large glass forming ability.
Figure 1 shows schematic illustration of this study. Spin current generated by charge-spin conversion in nonmagnetic metallic glass layer injects into ferromagnetic layer and exerts spin-orbit torque. Spin-orbit torque ferromagnetic resonance measurement was performed to evaluate charge-spin conversion efficiency quantitatively. Figure 2 shows typical ferromagnetic resonance spectrum observed for Si / SiO2 sub. / Pd-Si (5) / Ni-Fe (4) / Al2O3 (3) sample (thickness is in nm). The signal is fitted by summation of symmetric and anti-symmetric Lorentzian function as shown in solid curves in the figure. Effective spin-Hall angle was evaluated to be 0.20±0.03, which is obtained by modulation of ferromagnetic resonance linewidth induced by direct current. Charge-spin conversion efficiency is found to be enhanced by a factor of ~ 10 compared with Pd, whereas electrical resistivity is increased by a factor of only ~ 3. Detailed experimental results will be discussed in the presentation.
[1] W. Jiao, D. Z. Hou, C. Chen, H. Wang, Y. Z. Zhang, Y. Tian, Z. Y. Qiu, S. Okamoto, K. Watanabe, A. Hirata, T. Egami, E. Saitoh, and M. W. Chen, arXiv:1808.10371.
[2] S. Iihama, Y. Koike, Z. Lu, K. Watanabe, M. W. Chen, and S. Mizukami, submitted