[14p-PB2-1~11] 3.13 Semiconductor optical devices

[14p-PB2-6] Detection of Defect Levels in UV-LEDs by Combining Current Injection and Optical Excitation

〇Sota Shirai¹, Natsuki Chiyoda¹, Norihiko Kamata¹, Yuri Itokazu^1,2, Syunta Yamahatsu^1,2, Hideki Hirayama² (1.Saitama Univ., 2.RIKEN)

Keywords:LED, defect

We have developed detection of defects level in UV-LEDs by observing Current Increase (Δi) and the normalized electroluminescence intensity (I_N)under current injection. In this research, We focus on Current Increase (Δi) under current injection and Above-Gap Excitation (AGE) and try to figure out the cause of Δi. As a result, it turned out that Δi depends on BGE intensity storongly but AGE. So we conclude that Δi is maybe caused by defects in other layer except active layer. By applying this method, detection under current injection is expected.