2020年第67回応用物理学会春季学術講演会

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13 半導体 » 13.2 探索的材料物性・基礎物性

[14p-PB8-1~8] 13.2 探索的材料物性・基礎物性

2020年3月14日(土) 16:00 〜 18:00 PB8 (第1体育館)

16:00 〜 18:00

[14p-PB8-2] Marked photoresponsivity enhancement and minority carrier lifetime increase of boron-doped BaSi2 by atomic H passivation

〇(D)Zhihao Xu1、Kazuhiro Gotoh2、Kaoru Toko1、Noritaka Usami2、Takashi Suemasu1 (1.Univ. Tsukuba、2.Nagoya Univ.)

キーワード:H passivation

Introduction Semiconducting BaSi2 has many advantages for solar cell applications, such as a suitable band gap of 1.3 eV, a large absorption coefficient of 3 × 104 cm-1 at 1.5 eV, and a large minority-carrier diffusion length of ca. 10 μm [1]. The first-principle calculation predicts Si vacancies to be most likely to occur as point defects in BaSi2 and lead to the degradation of the minority-carrier properties of BaSi2[2]. Therefore, we try to passivate defects in undoped BaSi2 films by atomic hydrogen (H). The photoresponsivity of undoped BaSi2 films is enhanced markedly by irradiation of atomic H onto BaSi2 films for 15 min thanks to the improvement of minority carrier lifetime [3]. The basic solar cell structure is a pn junction. Thus, passivation of impurity-doped p- or n-BaSi2 films is of particular importance. In this study, we investigate the effect of atomic H passivation on the photoresponse property and minority carrier lifetime of B-doped p-BaSi2