[14p-PB8-1~8] 13.2 Exploratory Materials, Physical Properties, Devices

[14p-PB8-4] Investigation of photoresponse in n-Ru₂Si₃/p-Si pn junctions

〇Hiroki Nishi¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

Keywords:silicide

So far, we have prepared polycrystalline Ru₂Si₃ thin films with low electron density (~ 10¹⁶ cm^-3) and high mobility (~ 940 cm² / Vs) by solid phase epitaxy, and applied 1.5-4.0 eV incident light. Have a large absorption coefficient (α> 10⁵ cm^-1) [1]. In the evaluation of the optical response of the pn junction sample on the n-Ru₂Si₃ / p-Si substrate, it was also revealed that the optical response signal was about 4 times (at 1.3 eV) that of the n-Si / p-Si pn junction sample. [2]. In this study, we report current-voltage (I-V) and photoresponse characteristics at low temperature to investigate the photoresponse characteristics of n-Ru₂Si₃ / p-Si pn junction devices in detail.