[14p-PB9-1~2] 15.1 Bulk crystal growth

[14p-PB9-1] Phosphorus-doped Si crystal growth by the Czochralski method using SiP compound

〇(M1)Shotaro Tsuri¹, Toshinori Taishi¹, Yuta Watanabe², Nobumasa Kariya² (1.Shinshu Univ.(Eng), 2.M.SETEK Co.,Ltd)

Keywords:silicon, single crystal growth, P dooping

Phosphorus (P) doped Si crystal growth by the Czochralski method using SiP compound was investigated. It was found that P atoms, doped by using SiP compound, evaporated during the heating process before the growth start.