The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[15a-A201-1~8] 15.6 Group IV Compound Semiconductors (SiC)

Sun. Mar 15, 2020 9:00 AM - 11:30 AM A201 (6-201)

Takeshi Tawara(富士電機)

10:30 AM - 10:45 AM

[15a-A201-5] Anomalous Conduction in Heavily Al-Doped p-Type 4H-SiC with Al Concentration of First Half of 1019 cm-3

Atsuki Hidaka1, Akinobu Takeshita1, Tatsuya Imamura1, Kota Takano1, Kazuya Okuda1, Kohei Ogawa1, Hideharu Matsuura1, Shiyang Ji2, Kazuma Eto2, Takeshi Mitani2, Kazutoshi Kojima2, Tomohisa Kato2, Sadafumi Yoshida2, Hajime Okumura2 (1.Osaka Electro-Communication University, 2.AIST Advanced Power Electronics Research Center)

Keywords:Anomalous Conduction, First Half of 10^19 cm^-3, Heavily Al-Doped p-Type 4H-SiC

SiCを用いた低オン抵抗のパワーデバイスであるnチャネルInsulated-Gate Bipolar Transistorの実用化のためにはコレクタとなるp型4H-SiC基板の低抵抗率化が不可欠である。本研究ではChemical Vapor Deposition (CVD)法、Physical Vapor Transport (PVT)法とSolution Growth (SG) 法で成膜した試料の抵抗率の温度依存性(ρ(T))をvan der Pauw法で測定し、Al濃度(CAl)が1019 cm-3台前半で出現する未知の伝導(X伝導)について議論する。