Dependence of internal quantum efficiency on miscut angle toward <em>m</em>-axis of <em>c</em>-plane sapphire in AlGaN multiple quantum wells on annealed sputtered AlN templates

Ryota Oshimura; Yuki Akamatsu; Atsushi Fujii; Satoshi Kurai; Hideaki Murotani; Kenjiro Uesugi; Hideto Miyake; Yoichi Yamada

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[15a-A302-1~12] 15.4 III-V-group nitride crystals

Sun. Mar 15, 2020 9:00 AM - 12:15 PM A302 (6-302)

Ryuji Katayama(Osaka Univ.), Ryota Ishii(Kyoto Univ.)

11:30 AM - 11:45 AM

[15a-A302-10] Dependence of internal quantum efficiency on miscut angle toward m-axis of c-plane sapphire in AlGaN multiple quantum wells on annealed sputtered AlN templates

〇Ryota Oshimura¹, Yuki Akamatsu², Atsushi Fujii², Satoshi Kurai², Hideaki Murotani³, Kenjiro Uesugi⁴, Hideto Miyake⁵, Yoichi Yamada² (1.Fac. of Eng., Yamaguchi Univ., 2.Grad. School of STI, Yamaguchi Univ., 3.NIT,Tokuyama Coll., 4.SPORR, Mie Univ., 5.Grad. School of RIS, Mie Univ.)

Keywords:AlGaN, Internal Quantum Efficiency, Miscut angle