[15a-A302-1~12] 15.4 III-V族窒化物結晶

▲ [15a-A302-6] Simultaneous Growth of Multi-Color Micro LEDs Based on Super Thin Micro-Platelets with Various Surface Areas

〇(M2)Wentao Cai¹、Maki Kushimoto¹、Deki Manato²、Atsushi Tanaka^3,2、Shugo Nitta²、Yoshio Honda²、Hiroshi Amano^2,3,4,5 (1.Dept. of Electronics, NU. for Department of Electronics, Nagoya University、2.NU. IMaSS for Nagoya University, Institute of Materials and Systems for Sustainability、3.NIMS for National Institute for Materials、4.NU. ARC for Nagoya University, Akasaki Research Center、5.NU VBL for Nagoya University Venture Business Laboratory)

キーワード：Micro LED, MOVPE, InGaN

The simultaneous growth of core-shell nanorods (NRs) structure with InGaN/GaN Quantum Wells (QWs) for full-color micro-LED application has been achieved through controllably regulating the diameter and pitch of masked cavity in selective area growth (SAG). However, the undesired broad emission peak and low color purity due to multi-facet exposed prevent NRs LED from full-color micro LED application. In our work, a super-thin Micro-Platelet structure equipped with top c-plane of large proportion is prepared by MOVPE for improving uniformity of indium content in microstructure, thus contributing to higher color purity of micro-LED. Moreover, by controlling the diameter of the circle selective mask pattern, simultaneous growth of multi-color LED with PL peak shifting from 408 nm to 430 nm, was achieved. This work will contribute to the fabrication of multi-color micro-LED chip monolithically integrated by micro-platelet structures with varying dimensions.