The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

13 Semiconductors » 13.3 Insulator technology

[15a-A305-1~13] 13.3 Insulator technology

Sun. Mar 15, 2020 9:00 AM - 12:30 PM A305 (6-305)

Takanobu Watanabe(Waseda Univ.), Koji Kita(Univ. of Tokyo)

10:45 AM - 11:00 AM

[15a-A305-7] Investigation on band alignment modulation by interface dipole layer formation at perovskite oxide interface

Atsushi Tamura1, Koji Kita1 (1.The Univ. of Tokyo)

Keywords:dipole, insulator, perovskite

The dipole effect due to the insertion of the charge layer at the perovskite oxide interface is experimentally shown from the change of the Schottky barrier. In this experiment, LaAlO3 was inserted as a charge layer at the interface between the conductive oxide SrRuO3 and the insulating oxide SrTiO3. A shift to the higher energy side of 0.38 eV was observed by XPS cut-off energy measurement. This can be explained if a negative charge of 1014 /cm2 is present in the LAO layer at a distance of ~ 1 nm from the SRO surface, and it is possible to control the band alignment of stacked structure.