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▲ [15a-A404-4] Control growth of various polygonal-shaped h-BN single crystals
Keywords:hexagonal boron nitride, chemical vapor deposition, crystal growth
Hexagonal boron nitride (h-BN), a structural analogue of <gwmw class="ginger-module-highlighter-mistake-type-1" id="gwmw-15789861457600754877968">graphene</gwmw>, is a wide <gwmw class="ginger-module-highlighter-mistake-type-1" id="gwmw-15789861457604662200114">bandgap</gwmw> 2D insulating layered material, consisting of alternating <gwmw class="ginger-module-highlighter-mistake-type-1" id="gwmw-15789861457603259094019">sp</gwmw>2–<gwmw class="ginger-module-highlighter-mistake-type-1" id="gwmw-15789861464178717799421">bonded</gwmw> boron and nitrogen atoms. It shows appealing properties such as thermally stable in air up to 800oC, chemical inertness, stable thermal conductivity and superior elastic properties, and hence has drawn significant attention as a promising material in frontier applications. Although chemical vapor deposition (CVD) technique has developed as the most scalable process to synthesize h-BN on various transition metals, various polygonal-shaped single domain h-BN process is unclear and are still limited to <gwmw class="ginger-module-highlighter-mistake-type-3" id="gwmw-15789861502778878803658">few microns</gwmw> in their edge length. In this research, we study the growth kinetics of h-BN crystals larger than 25um via morphological transition.