[15a-A404-1~11] 17.3 層状物質

▲ [15a-A404-4] Control growth of various polygonal-shaped h-BN single crystals

〇(P)Kamal Prasad Sharma¹、Aliza Khaniya Sharma¹、Takahiro Maruyama¹ (1.Meijo Univ.)

キーワード：hexagonal boron nitride, chemical vapor deposition, crystal growth

Hexagonal boron nitride (h-BN), a structural analogue of <gwmw class="ginger-module-highlighter-mistake-type-1" id="gwmw-15789861457600754877968">graphene</gwmw>, is a wide <gwmw class="ginger-module-highlighter-mistake-type-1" id="gwmw-15789861457604662200114">bandgap</gwmw> 2D insulating layered material, consisting of alternating <gwmw class="ginger-module-highlighter-mistake-type-1" id="gwmw-15789861457603259094019">sp</gwmw>²–<gwmw class="ginger-module-highlighter-mistake-type-1" id="gwmw-15789861464178717799421">bonded</gwmw> boron and nitrogen atoms. It shows appealing properties such as thermally stable in air up to 800^oC, chemical inertness, stable thermal conductivity and superior elastic properties, and hence has drawn significant attention as a promising material in frontier applications. Although chemical vapor deposition (CVD) technique has developed as the most scalable process to synthesize h-BN on various transition metals, various polygonal-shaped single domain h-BN process is unclear and are still limited to <gwmw class="ginger-module-highlighter-mistake-type-3" id="gwmw-15789861502778878803658">few microns</gwmw> in their edge length. In this research, we study the growth kinetics of h-BN crystals larger than 25um via morphological transition.