[15a-A501-1~13] 10.1 Emerging materials in spintronics and magnetics (including fabrication and charactrization methodologies)

▲ [15a-A501-11] Current-induced electrical switching in (111) crystal oriented Mn₄N films with non-collinear spin structure

〇Shinji Isogami¹ (1.NIMS)

Keywords:Antiferromagnetic nitrides, Current-induced electrical switching

(111) crystal oriented Mn₄N epitaxial films were fabricated to demonstrate the current-induced electrical switching (CIES) by flowing the write pulse current (I_w) in the film plane. When the I_w was applied along in directions of 60° (red) and 150° (green) with respect to the [1-10] direction, clear and repeatable switching were observed. Based on the possible spin-structures examined by AMR measurements, the results led us to conclude that the electrical switching behavior obtained in the (111) crystal oriented Mn₄N films might be related to the reversal of Néel vector for antiferromagnetically coupled Mn moments.