[15a-A501-1~13] 10.1 新物質・新機能創成（作製・評価技術）

▼ [15a-A501-3] Anomalous Hall effect of epitaxial Mn-Sn films with various compositions and process temperatures

〇(M1)Juyoung Yoon¹、Yutaro Takeuchi¹、Ryuichi Itoh¹、Shun Kanai¹、Hideo Ohno¹、Shunsuke Fukami¹ (1.Tohoku Univ.)

キーワード：Spintronics, non-collinear antiferromagnet, antiferromagnetic spintronics

Non-collinear antiferromagnets with kagome lattice such as D0₁₉-Mn₃Sn have recently attracted much attention as they exhibit large anomalous Hall effect (AHE) induced by non-vanishing Berry curvature. We previously reported preparation and anisotropic AHE of epitaxial Mn₃Sn thin films with controlled kagome lattice orientation. However, transverse resistivity for an M-plane oriented sample with a vertical kagome lattice where a large transverse resistivity is expected was much smaller than that reported for bulk samples. Since AHE closely relates to the crystal and electronic structures, in this study, we systematically investigate AHE of epitaxial Mn-Sn thin films with various compositions and temperatures during deposition and annealing. As a result, the obtained results indicate that AHE of Mn₃Sn significantly depends on the composition and preparation conditions, and has correlation with crystal structure.