[15a-B415-1~9] 【CS.3】 Code-sharing Session of 3.11 & 3.13

▼ [15a-B415-8] Azimuth and Elevation Angle Dependence of Light Sensitivity in SOI Photodiode with Gold Grating

〇(DC)ANITHARAJ NAGARAJAN^1,2, SHUSUKE HARA³, ARUNA PRIYA PANCHANATHAN², HIROAKI SATOH³, HIROSHI INOKAWA^1,3 (1.GSST, Shizuoka Univ., 2.ECE, SRMIST, 3.RIE, Shizuoka Univ.)

Keywords:Angle sensitive pixels, silicon-on-insulator, Photodiode

The angle sensitive pixel (ASP) is the key component to accomplish the new generation of computational imaging. Although ASPs are essential to add two-dimensional (2D) angle information in the plenoptic function, most of commercial cameras capture only the intensity of incoming light even in the recent years. As one candidate of ASPs, we have already developed a silicon-on-insulator photodiode (SOI PD) with one-dimensional (1D) metallic line and space (L/S) grating, and the unique selectivities of light detection to wavelength, polarization, and incident angle have been shown. In this study, the light sensitivity of our proposed device on azimuth and elevation angle at the fixed incident angle and polarization is investigated. Compared to the conventional ASP, our proposed device captures a rich collection of angular information in 2D direction. This unique feature of the 2D angle sensitive response could be realized by using a single ASP. Our device is compatible with complementary metal-oxide-semiconductor (CMOS) integrated circuit technology, thus an array of ASPs could be incorporated in a single chip and offer potential applications, for example, depth mapping, lensless imaging, and light detection and ranging (LiDAR).