[15a-B508-1~8] 3.15 Silicon photonics and integrated photonics

[15a-B508-1] Alloy formation with Si cap layer at Ge mesa sidewalls selectively grown on Si (2)

〇Riku Katamawari¹, Kazuki Kawashita¹, Yasuhiko Ishikawa¹ (1.Toyohashi Univ. Tech.)

Keywords:Ge, silicon photonics

In silicon photonics, Ge epitaxial layer on Si has been used as a photodetector. In the last meeting, SiGe alloys were reported to be spontaneously formed at the Si cap/Ge interface. In this presentation, effects of the growth temperature for the Si cap layer are investigated on the alloy formation as well as the Ge mesa shape.