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[15a-B508-2] Bandgap control for wire structures of Ge on Si using SiNx stressors
Keywords:germanium, Si photonics
SiNx stressors are used to induce the lattice strain in submicron-wide Ge line structures in terms of the control of direct bandgap for Ge. PL emission peak is shifted toward the shorter wavelength by the deposition of SiNx film with a built-in tensile stress. A compressive stress would be applied to Ge, leading to the bandgap widening.