[15a-B508-1~8] 3.15 Silicon photonics and integrated photonics

[15a-B508-2] Bandgap control for wire structures of Ge on Si using SiN_x stressors

〇(M1)Shuhei Sonoi¹, Kazuki Kawashita¹, Riku Katamawari¹, Yasuhiko Ishikawa¹ (1.Toyohashi Univ. of Tech.)

Keywords:germanium, Si photonics

SiN_x stressors are used to induce the lattice strain in submicron-wide Ge line structures in terms of the control of direct bandgap for Ge. PL emission peak is shifted toward the shorter wavelength by the deposition of SiN_x film with a built-in tensile stress. A compressive stress would be applied to Ge, leading to the bandgap widening.