10:15 AM - 10:30 AM
[15a-B508-4] Fabrication and characterizations of Ge photodetectors on Si using trench-filling growth
Keywords:Ge, photodetector, trench-filling growth
Selective growth of Ge on Si by chemical vapor deposition leads to a formation of trapezoidal mesa structure with inclined sidewalls. When such a mesa structure is applied to normal-incidence free-space Ge photodetector, the sidewall area acts as a dead space in the photodetection. In this paper, Ge photodetectors with vertical sidewalls are fabricated using a trench-filling growth. Although the dark current is larger than that for mesa-shaped Ge photodetectors, post-growth annealing leads to a reduction of dark current as small as that for the mesa-shaped ones.