[15a-B508-1~8] 3.15 Silicon photonics and integrated photonics

[15a-B508-5] Dependence of Si waveguide width on properties of RWG-lasers with III-V/Si direct bonding structure

〇Takehiko Kikuchi^1,2, Naoki Fujiwara¹, Takuo Hiratani¹, Toshiyuki Nitta¹, Moataz Eissa², Yuning Wang², Yutaka Makihara², Nobuhiko Nishiyama^2,3, Hideki Yagi¹ (1.TDL, Sumitomo Electric., 2.Tokyo Tech., 3.IIR, Tokyo Tech.)

Keywords:III-V/Si hybrid integration, Direct bonding, Ridge-waveguide laser

The III-V/Si hybrid integration technologies is very attractive for the realization of a new-generation photonic integrated circuit. In particular, it is possible for the hybrid laser with III-V/Si direct bonding structure to control the distribution of optical field in the gain region depending on the application, designing the width of the III-V region and the Si waveguide individually. In this presentation, we report the Si waveguide width dependence of the properties of III-V/Si ridge-waveguide laser, and experimentally demonstrate the controllability of effective gain and lateral mode for the hybrid structure.