11:15 AM - 11:30 AM
▼ [15a-B508-7] Observation of Sub-bandgap Photodetection at 2 μm wavelengths in a Germanium Lateral PIN Photodetector
Keywords:germanium, mid infrared, photodetector
Being boosted by the crying needs for high-speed and broadband data communication, silicon photonics has attracted people's attention not only in the near-infrared but also in the mid-infrared wavelengths. Moreover, with the evolution of low-loss hollow-core optical fibers and thulium or holmium optical amplifiers, developments of photonic building blocks for MIR have been promoted. Particularly, monolithic silicon photodetectors operating at sub-bandgap wavlengths, i.e. 2 μm, through defects mediation have been reported. In this work, we reported sub-bandgap photodetection in germanium lateral PIN photodectors on Germanium-on-insulator wafer operating at 2 μm wavelengths for the first time, attributable to defects mediated mechanism.