[15a-B508-1~8] 3.15 シリコンフォトニクス・集積フォトニクス

▼ [15a-B508-7] Observation of Sub-bandgap Photodetection at 2 μm wavelengths in a Germanium Lateral PIN Photodetector

〇(DC)Ziqiang Zhao¹、Chongpei Ho¹、Qiang Li¹、Kasidit Toprasertpong¹、Shinichi Takagi¹、Mitsuru Takenaka¹ (1.The Univ. of Tokyo)

キーワード：germanium, mid infrared, photodetector

Being boosted by the crying needs for high-speed and broadband data communication, silicon photonics has attracted people's attention not only in the near-infrared but also in the mid-infrared wavelengths. Moreover, with the evolution of low-loss hollow-core optical fibers and thulium or holmium optical amplifiers, developments of photonic building blocks for MIR have been promoted. Particularly, monolithic silicon photodetectors operating at sub-bandgap wavlengths, i.e. 2 μm, through defects mediation have been reported. In this work, we reported sub-bandgap photodetection in germanium lateral PIN photodectors on Germanium-on-insulator wafer operating at 2 μm wavelengths for the first time, attributable to defects mediated mechanism.