9:30 AM - 9:45 AM
[15a-D311-3] Origin of the Ultra-Sharp Gate Modulation in VO2 Mott Transistors
Keywords:electrostatic effect, metal-insulator transition, Joule heat
Ultra-sharp ON/OFF switching was experimentally demonstrated in the VO2-channel Mott transistor, where the VO2 metal-insulator transition was induced by the application of the gate voltage. The device simulation showed a unique mechanism to the three-terminal devices, namely, the gate voltage induces transition by electrostatic electron accumulation while the drain voltage generates Joule heat acceleratedly as the transition evolves.